| Auteur | Rechercher : Molasa, M.; Rechercher : Kuldová, K.; Rechercher : Borysiuk, J.; Rechercher : Wasilewski, Z.1; Rechercher : Babinski, A. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | Anisotropic exchange; Effect of In; Energy ranges; Grown structures; InAs/GaAs; Microphotoluminescence; Neutral excitons; Self assembled quantum dots; Transmission electron; Anisotropy; Excitons; Semiconductor quantum dots; Transmission electron microscopy; Indium |
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| Résumé | The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the InAs/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting. |
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| Date de publication | 2011 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21271290 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 648e77af-0148-4493-9c59-9ea7f5ae39a9 |
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| Enregistrement créé | 2014-03-24 |
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| Enregistrement modifié | 2020-04-21 |
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