AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy
AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy
| DOI | Resolve DOI: https://doi.org/10.1016/j.sse.2005.01.012 |
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| Author | Search for: 1; Search for: 1; Search for: 1; Search for: ; Search for: 2; Search for: 1 |
| Affiliation |
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| Format | Text, Article |
| Publication date | 2005 |
| In | |
| NPARC number | 12744694 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 65e231f5-2132-4216-bde0-a1f09997239f |
| Record created | 2009-10-27 |
| Record modified | 2020-04-07 |
- Date modified: