Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy
Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy
| DOI | Resolve DOI: https://doi.org/10.1063/1.109784 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1993-08-30 |
| In | |
| Language | English |
| NRC number | 1125 |
| NPARC number | 8899978 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 69b6bfb5-59ad-4c6a-a204-aef243081f17 |
| Record created | 2009-04-22 |
| Record modified | 2020-04-24 |
- Date modified: