| DOI | Resolve DOI: https://doi.org/10.1002/1521-3951(200212)234:3<822::AID-PSSB822>3.0.CO;2-K |
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| Author | Search for: Tang, Haipeng1; Search for: Webb, James2; Search for: Rolfe, Stephen1; Search for: Bardwell, Jennifer1; Search for: Tomka, D.; Search for: Coleridge, P.; Search for: Ko, Chun-Te3; Search for: Su, Y.; Search for: Chang, Shoude1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
- National Research Council Canada. NRC Steacie Institute for Molecular Sciences
- National Research Council Canada. NRC Genomics and Health Initiative
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| Format | Text, Article |
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| Abstract | The growth of high quality GaN/AlGaN two-dimensional electron gas on MOCVD GaN template substrates by ammonia-MBE is reported. The homoepitaxial growth required a significantly lower growth temperature than that needed for growth on SiC or sapphire substrates, and yielded significantly improved surface smoothness, and consequently improved electrical characteristics of the two-dimensional electron gas. A low temperature Hall mobility of 14300 cm2/V s and quantum mobility of 2000 cm2/V s were obtained, representing the highest values observed in the GaN/AlGaN structures grown by the ammonia-MBE technique. A correlation between the surface roughness and increased Hall mobility to quantum mobility ratio was observed, suggesting that the surface roughness could be a source of small-angle scattering in these structures. |
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| Publication date | 2002 |
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| Publisher | Wiley |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12328590 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 69bbc3df-6db2-4848-9baf-65100bb68263 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-06 |
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