A comparative study of temperature sensitivity of InGaAsP and AlGaAs MQW lasers using numerical simulations

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/3.466060
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subject0.82 mum; 1.55 mum; AlGaAs; AlGaAs MQW lasers; aluminium compounds; Auger effect; Auger recombination; band offset; current leakage; electron-hole recombination; gallium arsenide; III-V semiconductors; indium compounds; InGaAsP; InGaAsP MQW lasers; laser theory; laser transitions; numerical simulations; optical confinement; quantum barrier; quantum well lasers; semiconductor device models; structural parameter; temperature sensitivity; thermal current leakage
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LanguageEnglish
NPARC number12327548
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Record identifier69d456ee-c973-4eec-b5d7-a404c8c99b83
Record created2009-09-10
Record modified2020-04-29
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