Dopant depth distribution effects on the gain profile of avalanche photodiodes fabricated by Zn diffusion

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1364/NOMA.2020.NoTu2F.1
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Affiliation
  1. National Research Council of Canada. Advanced Electronics and Photonics
FormatText, Article
ConferenceNovel Optical Materials and Applications, July 13-16, 2020, Washington, DC
Subjectavalanche photodiodes; diffusion; electric fields; field enhancement; laser sources; scanning electron microscopy
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PublisherOSA
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LanguageEnglish
Peer reviewedYes
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Record identifier69e361f6-5b83-4423-914a-923fb001ba5f
Record created2022-07-25
Record modified2022-07-25
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