DOI | Resolve DOI: https://doi.org/10.1364/NOMA.2020.NoTu2F.1 |
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Author | Search for: Pitts, Oliver J.1; Search for: Salehzadeh, Omid1; Search for: Hisko, Matthew1; Search for: Walker, Alexandre W.1; Search for: SpringThorpe, Anthony J.1 |
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Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
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Format | Text, Article |
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Conference | Novel Optical Materials and Applications, July 13-16, 2020, Washington, DC |
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Subject | avalanche photodiodes; diffusion; electric fields; field enhancement; laser sources; scanning electron microscopy |
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Abstract | We show that areas of high edge gain in avalanche photodiodes are associated with locally enhanced diffusion depth by employing a novel method using scanning electron microscopy of selectively etched Zn diffused structures. |
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Publication date | 2020-06-13 |
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Publisher | OSA |
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In | |
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Language | English |
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Peer reviewed | Yes |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 69e361f6-5b83-4423-914a-923fb001ba5f |
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Record created | 2022-07-25 |
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Record modified | 2022-07-25 |
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