Microwave photoresistance in an ultra-high-quality GaAs quantum well

From National Research Council Canada

Download
  1. (PDF, 847 KB)
DOIResolve DOI: https://doi.org/10.1103/PhysRevB.93.121305
AuthorSearch for: ; Search for: 1 ; Search for: ; Search for: ; Search for: ; Search for:
Name affiliation
  1. National Research Council Canada. Security and Disruptive Technologies
FormatText
TypeArticle
Journal titlePhysical Review B
ISSN2469-9950
2469-9969
Volume93
Issue12
Article number121305(R)
Pages1–6
Abstract
The temperature dependence of microwave-induced resistance oscillations (MIRO), according to the theory, originates from electron-electron scattering. This scattering affects both the quantum lifetime, or the density of states, and the inelastic lifetime, which governs the relaxation of the nonequilibrium distribution function. Here, we report on MIRO in an ultra-high-mobility (μ>3×10⁷cm²/V s) two-dimensional electron gas at T between 0.3 and 1.8 K. In contrast to theoretical predictions, the quantum lifetime is found to be T independent in the whole temperature range studied. At the same time, the T dependence of the inelastic lifetime is much stronger than can be expected from electron-electron interactions.
Publication date
PublisherAmerican Physical Society
Terms of use
LanguageEnglish
Peer reviewedYes
NPARC number23000136
Export citationExport as RIS
Report a correctionReport a correction
Record identifier6f15cf6e-4f15-49fe-911a-ee5351eef85d
Record created2016-06-07
Record modified2019-03-12
Date modified:
Report a problem on this page