Characterization of Si[1-x]Ge[x] epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor
Characterization of Si[1-x]Ge[x] epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor
| DOI | Resolve DOI: https://doi.org/10.1116/1.589209 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1996-05 |
| In | |
| Language | English |
| NRC number | NRC-INMS-1173 |
| NPARC number | 8897657 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 755596ef-87c7-42df-b735-b9d63d1ecb34 |
| Record created | 2009-04-22 |
| Record modified | 2020-03-20 |
- Date modified: