Strong potential profile fluctuations and effective localization process in InGaN/GaN multiple quantum wells grown on {10-1m} faceted surface GaN template
Strong potential profile fluctuations and effective localization process in InGaN/GaN multiple quantum wells grown on {10-1m} faceted surface GaN template
DOI | Resolve DOI: https://doi.org/10.1063/1.2214211 |
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Author | Search for: 1; Search for: 1; Search for: 1; Search for: 2; Search for: ; Search for: ; Search for: |
Affiliation |
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Format | Text, Article |
Publication date | 2006 |
In | |
Language | English |
Peer reviewed | Yes |
NPARC number | 12744362 |
Export citation | Export as RIS |
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Record identifier | 75699883-fb09-4349-8b74-e461e7b25589 |
Record created | 2009-10-27 |
Record modified | 2023-04-17 |
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