Language selection

Government of Canada / Gouvernement du Canada

Search

Interplay between crystal phase purity and radial growth in InP nanowires

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1088/0957-4484/23/38/385205
AuthorSearch for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 2
Affiliation
  1. National Research Council of Canada. Information and Communication Technologies
  2. National Research Council of Canada. Security and Disruptive Technologies
FormatText, Article
SubjectCondensed matter: electrical, magnetic and optical; Semiconductors; Surfaces, interfaces and thin films; Condensed matter: structural, mechanical & thermal; Nanoscale science and low-D systems
Abstract
The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or low stacking fault density can be controllably introduced into wurtzite nanowires. It is found that regions with high stacking fault density encourage radial growth. Through careful choice of growth conditions pure wurtzite InP nanowires are then grown which exhibit narrow 4.2K photoluminescence linewidths of 3.7meV at 1.490meV, and no evidence of emission related to stacking faults or zincblende insertions.
Publication date
In
  • Nanotechnology 23, no. 38, 385205 (5 September 2012).
LanguageEnglish
Peer reviewedYes
NPARC number21270146
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier76109713-d1b9-4318-9542-1bc940bce10d
Record created2014-01-06
Record modified2020-04-21
Date modified: