| DOI | Resolve DOI: https://doi.org/10.1063/1.361134 |
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| Author | Search for: Benzaquen, R.1; Search for: Roth, A. P.1; Search for: Leonelli, R. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | absorption spectra; epitaxy; gallium arsenides; indium arsenides; indium phosphides; interface structure; photoluminescence; quantum wells; strains |
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| Abstract | We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth interruption times result in the formation of interfacial layers which drastically alter the structural properties of Ga0.47In0.53As/InP multiple quantum wells. An analysis of double-crystal x-ray diffraction data reveals that exposure of InP to arsine for 2 s is sufficient to create approximately 3 monolayers of InAs0.55P0.45 ternary under biaxial compressive strain at the InP/Ga047In0.53As interface. Moreover, exposure of Ga0.47In0.53As to phosphine for 2 s results in the formation of approximately 2 monolayers of Ga0.48In0.52As0.21P0.79 quaternary under biaxial tensile strain at the Ga0.47In0.53As/InP interface. We find that long exposures to hydrides (over 5 s) rather than short ones give rise to interfacial layers with less compositional disorder and/or thickness fluctuation. Moreover, photoluminescence and absorption spectroscopy data reveal the negligible effect of InAsxP1−x and GaxIn1−xAsyP1−y interfacial layers on the emission and optical absorption properties of Ga0.47In0.53As/InP multiple quantum wells with sufficiently thick Ga0.47In0.53As layers |
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| Publication date | 1996-03-01 |
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| Publisher | AIP |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12338009 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 763c0b75-f36a-4fe2-9c6b-2c59fd3dc4c9 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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