| DOI | Trouver le DOI : https://doi.org/10.1063/1.361134 |
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| Auteur | Rechercher : Benzaquen, R.1; Rechercher : Roth, A. P.1; Rechercher : Leonelli, R. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | absorption spectra; epitaxy; gallium arsenides; indium arsenides; indium phosphides; interface structure; photoluminescence; quantum wells; strains |
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| Résumé | We have carried out a detailed structural and optical characterization of Ga0.47In0.53As/InP multiple quantum wells grown by chemical beam epitaxy using a well-defined sequence of growth interruption times between successive layers. These growth interruption times result in the formation of interfacial layers which drastically alter the structural properties of Ga0.47In0.53As/InP multiple quantum wells. An analysis of double-crystal x-ray diffraction data reveals that exposure of InP to arsine for 2 s is sufficient to create approximately 3 monolayers of InAs0.55P0.45 ternary under biaxial compressive strain at the InP/Ga047In0.53As interface. Moreover, exposure of Ga0.47In0.53As to phosphine for 2 s results in the formation of approximately 2 monolayers of Ga0.48In0.52As0.21P0.79 quaternary under biaxial tensile strain at the Ga0.47In0.53As/InP interface. We find that long exposures to hydrides (over 5 s) rather than short ones give rise to interfacial layers with less compositional disorder and/or thickness fluctuation. Moreover, photoluminescence and absorption spectroscopy data reveal the negligible effect of InAsxP1−x and GaxIn1−xAsyP1−y interfacial layers on the emission and optical absorption properties of Ga0.47In0.53As/InP multiple quantum wells with sufficiently thick Ga0.47In0.53As layers |
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| Date de publication | 1996-03-01 |
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| Maison d’édition | AIP |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12338009 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 763c0b75-f36a-4fe2-9c6b-2c59fd3dc4c9 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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