Language selection

Government of Canada / Gouvernement du Canada

Search

Optical properties of InAs/InP planar quantum dot microscavities

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1557/PROC-737-E7.3
AuthorSearch for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference2002 MRS Fall Meeting: Symposia E/F: Physics and Technology of Semiconductor Quantum Dots – Nanocrystalline Semiconductor Materials and Devices, 2-5 December 2002, Boston, MA, USA
Abstract
Planar InAs/InP quantum dot microcavities using multi-layer SiO2/Ta2O5 Bragg reflectors have been studied in emission. The spectra exhibit collection optics-limited cavity linewidths of ∼1meV with the occasional ∼200μeV single-dot emission. Measurements as a function of incident power show quantum dot saturation behavior, with transfer of oscillator strength to the wetting layer outside the cavity stop band. Saturation behavior at fixed pump power is also observed as a function of decreasing temperature. Dispersion measurements as a function of emission angle show polarization splitting in qualitative agreement with theory.
Publication date
In
  • 2002 MRS Fall Meeting - Symposia E/F – Physics and Technology of Semiconductor Quantum Dots – Nanocrystalline Semiconductor Materials and Devices (2002).
Series
  • Materials Research Society Symposia Proceedings, no. 737.
LanguageEnglish
Peer reviewedYes
NPARC number12346433
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier79e5dfa2-fa87-4ee9-bc6b-d42a02be479f
Record created2009-09-17
Record modified2020-03-30
Date modified: