Fabrication of High Performance GaN Modulation Doped Field Effect Transistors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.582172
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  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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NPARC number12330143
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Record identifier7d06a0cf-9b51-437d-a088-5612a2c4931f
Record created2009-09-10
Record modified2020-03-26
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