X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100)in Nitrous Oxide
X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100)in Nitrous Oxide
| DOI | Resolve DOI: https://doi.org/10.1149/1.1374219 |
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| Author | Search for: ; Search for: 1; Search for: ; Search for: 1; Search for: |
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| Format | Text, Article |
| Publication date | 2001 |
| In | |
| NPARC number | 12744733 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 88e164bc-e4a9-4fce-a773-8ecef5b069aa |
| Record created | 2009-10-27 |
| Record modified | 2020-03-27 |
- Date modified: