Language selection

Government of Canada / Gouvernement du Canada

Search

Selective growth of GaN on SiC substrate patterned with an AlN seed layer by ammonia-source molecular beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.1413956
AuthorSearch for: 1; Search for: 1; Search for: 2; Search for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • Applied Physics Letters 79, no. 17 (2001): 2764–.
LanguageEnglish
Peer reviewedYes
NPARC number12327100
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier89a616a4-e623-42e5-80b9-67c4a2a17e00
Record created2009-09-10
Record modified2023-05-10
Date modified: