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Growth of high performance GaN modulation-doped field-effect transisters by ammonia-molecular-beam-epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.582255
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • Journal of Vacuum Science & Technology A 18, no. 2 (2000): 652–655.
NPARC number12338042
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Record identifier8b498b96-4402-4912-be82-62440bdd32c0
Record created2009-09-10
Record modified2020-03-26
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