| DOI | Resolve DOI: https://doi.org/10.1063/1.365857 |
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| Author | Search for: Liu, H. C.1; Search for: Li, L.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells |
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| Abstract | A systematic study of a set of GaAs/AlGaAs quantum well infrared photodetectors with various shapes of the first barrier (which acts as the device emitter or collector barrier depending on the applied bias polarity) is reported on. Three types of barriers are investigated: a triangular, a thick, and a high barrier. It is found that the effect of the detailed emitter or collector barrier shapes on the detector performance is negligible. |
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| Publication date | 1997-07-15 |
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| In | |
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| NPARC number | 12328103 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8ce86903-fd69-4aeb-821d-c431a7afd92c |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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