| DOI | Trouver le DOI : https://doi.org/10.1063/1.365857 |
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| Auteur | Rechercher : Liu, H. C.1; Rechercher : Li, L.1; Rechercher : Buchanan, M.1; Rechercher : Wasilewski, Z. R.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | aluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells |
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| Résumé | A systematic study of a set of GaAs/AlGaAs quantum well infrared photodetectors with various shapes of the first barrier (which acts as the device emitter or collector barrier depending on the applied bias polarity) is reported on. Three types of barriers are investigated: a triangular, a thick, and a high barrier. It is found that the effect of the detailed emitter or collector barrier shapes on the detector performance is negligible. |
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| Date de publication | 1997-07-15 |
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| Dans | |
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| Numéro NPARC | 12328103 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 8ce86903-fd69-4aeb-821d-c431a7afd92c |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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