| DOI | Resolve DOI: https://doi.org/10.1049/el:19951415 |
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| Author | Search for: He, J.-J.1; Search for: Feng, Y.1; Search for: Koteles, E. S.1; Search for: Poole, P. J.1; Search for: Davis, M.1; Search for: Dion, M.2; Search for: Goldberg, R.; Search for: Mitchell, I.; Search for: Charbonneau, S.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Institute for Aerospace Research
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| Format | Text, Article |
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| Subject | absorption constant; bandgap shifted optical waveguides; blue shift; InGaAsP-InP; junction characteristics; MeV ion implantation; OEIC; p-i-n laser structure; quantum well waveguides; semiconductor lasers |
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| Abstract | A large blue shift of the bandgap 90 nm, in an 1nGaAsP/InP quantum well (QW) pin laser structure using a single-step MeV phosphorous ion implantation is reported. The absorption constant at the original band-edge was reduced from 110 cm-1 to only 4 cm-1. No excess loss in the waveguide due to the QW intermixing process was observed. Current/voltage measurements indicate that junction characteristics are well maintained, providing a means of producing side-by-side active and passive sections using a simple, single processing step on laser structures fabricated using standard growth techniques. |
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| Publication date | 1995-11-23 |
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| In | |
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| Language | English |
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| NPARC number | 12334529 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8dd79fce-5367-47b2-9969-25e4853b8b4e |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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