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Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy

DOIResolve DOI: https://doi.org/10.1093/oxfordjournals.jmicro.a023802
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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectscanning electron microscopy; in situ imaging; Si(III)-Au; liquid metal island; step bunch
Abstract
In situ scanning electron microscopy has been used to control Au island formation on a patterned Si(III) surface with a periodic array of atomicstep bunches and holes. Liquid phase Au–Si islands were observed to redistribute on the patterned surface by annealing. The islands accumulate at a panicular position of the step bunch in each pattern unit. This phenomenon is interpreted in terms of the energetic stability of a droplet on a patterned surface.
Date published
PublisherOxford
Japanese Society of Microscopy
In
  • Journal of Electron Microscopy 49, no. 2 (1 January 2000): 225–229.
Peer reviewedYes
NPARC number12744707
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Record identifier91297693-efcc-4678-b190-297d4682e8ae
Record created2009-10-27
Record modified2023-12-22

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