Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy
Control of island formation on silicon surfaces using ultra-high-vacuum scanning electron microscopy
DOI | Resolve DOI: https://doi.org/10.1093/oxfordjournals.jmicro.a023802 |
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Author | Search for: ; Search for: 1; Search for: |
Affiliation |
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Format | Text, Article |
Subject | scanning electron microscopy; in situ imaging; Si(III)-Au; liquid metal island; step bunch |
Abstract | |
Publication date | 2000-01-01 |
Publisher | Oxford Japanese Society of Microscopy |
In | |
Peer reviewed | Yes |
NPARC number | 12744707 |
Export citation | Export as RIS |
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Record identifier | 91297693-efcc-4678-b190-297d4682e8ae |
Record created | 2009-10-27 |
Record modified | 2023-12-22 |
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