| DOI | Resolve DOI: https://doi.org/10.1063/1.2357162 |
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| Author | Search for: Dion, C.1; Search for: Poole, P. J.1; Search for: Raymond, S.1; Search for: Desjardins, P.; Search for: Schiettekatte, F. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | This paper examines the influence of rapid thermal annealing on the photoluminescence spectra of self-assembled InAs/InP(001) quantum dots capped with 760 nm InP deposited at a reduced temperature. The capping layer contained a large concentration of point defects that can promote interdiffusion upon annealing. The onset temperature for measurable blueshift in the emission spectra was found to be ∼ 600 °C whereas shifts of 270 meV were obtained after annealing at 750 °C for 300 s. Gradual etching of the InP capping layer enabled to progressively quench energy shifts upon annealing, a promising result for spatially selective emission tuning. |
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| Publication date | 2006-09-25 |
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| In | |
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| Language | English |
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| NPARC number | 12744020 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 92134919-926f-4418-9864-103926203ab7 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-22 |
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