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Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.2199457
AuthorSearch for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Applied Physics Letters 88, no. 17 (2006): 172110–.
LanguageEnglish
Peer reviewedYes
NPARC number12743887
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Record identifier94cbb96c-2f48-46c0-8171-7b821153d8ef
Record created2009-10-27
Record modified2023-05-10
Date modified: