| Download | - View accepted manuscript: Room-temperature continuous-wave opertation of GaInNAsSb laser diodes at 1.55μm (PDF, 522 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1049/el:20052712 |
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| Author | Search for: Gupta, J. A.1; Search for: Barrios, P. J.1; Search for: Zhang, X.; Search for: Lapointe, J.1; Search for: Poitras, D.1; Search for: Pakulski, G.1; Search for: Wu, X.1; Search for: Delâge, A.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The first 1.55 µm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3×589 µm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70°C. |
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| Publication date | 2005-09-15 |
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| In | |
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| Language | English |
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| NPARC number | 12744226 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 95048afa-528e-4c6f-b265-fb1ff44d60c0 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-07 |
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