| DOI | Resolve DOI: https://doi.org/10.1016/j.mee.2011.08.006 |
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| Author | Search for: Bonifas, A.P.1; Search for: McCreery, R.L.1; Search for: Harris, K.D.1 |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Subject | Feature sizes; Nano-imprint; Pattern transfers; Positive features; Selective etching; SIMPLE method; Thermal oxidation; Thermally oxidized; Electron beam lithography; Electron beams; Optical resolving power; Oxidation; Nanoimprint lithography |
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| Abstract | We introduce a simple thermal oxidation technique for decreasing feature sizes of nanoimprint lithography (NIL) masters. During oxidation, the dimensions of negative features are reduced (e.g., gaps become narrower), and the dimensions of positive features increase (e.g., lines become wider). We demonstrate that positive feature sizes can also be reduced after oxidation by selective etching of the oxide. We show that 74 nm gaps can be reduced to 10 nm and 226 nm lines can be narrowed to 55 nm. The reduction in feature size achieved in both positive and negative structures directly translates into increased imprint resolution, and we demonstrate improved resolution in a complete NIL pattern transfer using thermally oxidized NIL masters. © 2011 Elsevier B.V. All rights reserved. |
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| Publication date | 2011 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271273 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 98482102-14dc-4d40-9922-e4774ddf43ef |
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| Record created | 2014-03-24 |
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| Record modified | 2020-04-21 |
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