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Thermal oxidation as a simple method to increase resolution in nanoimprint lithography

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1016/j.mee.2011.08.006
AuteurRechercher : 1; Rechercher : 1; Rechercher : 1
Affiliation
  1. Conseil national de recherches du Canada. Institut national de nanotechnologie
FormatTexte, Article
SujetFeature sizes; Nano-imprint; Pattern transfers; Positive features; Selective etching; SIMPLE method; Thermal oxidation; Thermally oxidized; Electron beam lithography; Electron beams; Optical resolving power; Oxidation; Nanoimprint lithography
Résumé
We introduce a simple thermal oxidation technique for decreasing feature sizes of nanoimprint lithography (NIL) masters. During oxidation, the dimensions of negative features are reduced (e.g., gaps become narrower), and the dimensions of positive features increase (e.g., lines become wider). We demonstrate that positive feature sizes can also be reduced after oxidation by selective etching of the oxide. We show that 74 nm gaps can be reduced to 10 nm and 226 nm lines can be narrowed to 55 nm. The reduction in feature size achieved in both positive and negative structures directly translates into increased imprint resolution, and we demonstrate improved resolution in a complete NIL pattern transfer using thermally oxidized NIL masters. © 2011 Elsevier B.V. All rights reserved.
Date de publication
Dans
  • Microelectronic Engineering 88, nº 11 (2011) : 3256–3260.
Langueanglais
Publications évaluées par des pairsOui
Numéro NPARC21271273
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Identificateur de l’enregistrement98482102-14dc-4d40-9922-e4774ddf43ef
Enregistrement créé2014-03-24
Enregistrement modifié2020-04-21
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