| DOI | Resolve DOI: https://doi.org/10.1017/S143192761501199X |
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| Author | Search for: Hayashida, Misa1; Search for: Ogawa, Shinichi; Search for: Malac, Marek1 |
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| Affiliation | - National Research Council of Canada. Nanotechnology
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| Format | Text, Article |
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| Conference | Microscopy & Microanalysis 2015, Aug 2-6, 2015, Portland, Oregon, United States |
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| Abstract | Interface roughness of buried layers in nano-meter size devices often degrades performance of the devices because the roughness of the interfaces might affect expected growth of consequent layers during the device fabrication. To characterize the roughness of an exposed surface, atomic force microscope (AFM) has been widely used. On the other hand, when the interfaces are buried by additional device layers, it is impossible to measure the interface roughness by AFM. In this study, we present quantitative measurement of buried interface roughness by electron tomography using a STEM. The presented method allows to characterize interface roughness of the devices with a resolution of 1 nm. |
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| Publication date | 2015-08-01 |
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| Publisher | Cambridge University Press |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9a04e334-5df3-4af2-b2c5-17fff17006e2 |
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| Record created | 2020-01-21 |
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| Record modified | 2024-05-15 |
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