Dopant layer abruptness in strained Si[1-x]Ge[x] heterostructures
Dopant layer abruptness in strained Si[1-x]Ge[x] heterostructures
| DOI | Resolve DOI: https://doi.org/10.1116/1.1689297 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 2004 |
| In | |
| Language | English |
| NRC number | NRC-INMS-1087 |
| NPARC number | 8899604 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | a19174dd-36ba-4b73-bca5-51ea0fc48844 |
| Record created | 2009-04-22 |
| Record modified | 2020-04-17 |
- Date modified: