| Alternative title | Simulation of the hole and current distributions in Si-Ge p-channel FETs with graded Ge profiles |
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| Download | - View final version: Simulation of the hole and current distributions in Si-Ge p-channel FETs with graded profiles (PDF, 1.1 MiB)
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| Author | Search for: McAlister, S. P.1; Search for: McKinnon, W. R.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1995 Second International Semiconductor Device Research Symposium (ISDRS '95), December 5-8, 1995, Charlottesville, Virginia, USA |
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| Publication date | 1995-12-08 |
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| Publisher | School of Engineering and Applied Science |
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| In | |
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| Peer reviewed | Yes |
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| NPARC number | 12328252 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | a48607af-8b46-4e2e-ac6b-e3935e90f2e4 |
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| Record created | 2009-09-10 |
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| Record modified | 2021-05-31 |
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