Growth of GaN/AlGaN HFETs on SiC substrates with optimized electrical characteristics using the ammonia-MBE technique
Growth of GaN/AlGaN HFETs on SiC substrates with optimized electrical characteristics using the ammonia-MBE technique
DOI | Resolve DOI: https://doi.org/10.1002/1521-396X(200212)194:2<439::AID-PSSA439>3.0.CO;2-3 |
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Affiliation |
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Format | Text, Article |
Abstract | |
Publication date | 2002-12-04 |
Publisher | Wiley |
In | |
Language | English |
Peer reviewed | Yes |
NPARC number | 12339271 |
Export citation | Export as RIS |
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Record identifier | a5c5eaa9-f29c-451b-98f8-c9f7b671a3ac |
Record created | 2009-09-11 |
Record modified | 2022-03-10 |
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