| DOI | Resolve DOI: https://doi.org/10.1016/0921-4526(94)90950-4 |
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| Author | Search for: Campbell, J. W.; Search for: D'Iorio, M.; Search for: Pudalov, V. M.1 |
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| Affiliation | - National Research Council of Canada
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| Format | Text, Article |
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| Abstract | We describe the characteristics of the temperature activated dc-transport observed in the insulating phase which occurs at dilute concentrations and low temperatures in high mobility 2D electron systems in Si. Our data show the existence of two different temperature regimes, one of which can be fitted well using the phase slippage model commonly applied to charge density waves. |
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| Publication date | 1994-02-02 |
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| In | |
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| NPARC number | 12327867 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | a78acd53-ddf1-4c74-a810-a784a6254e7a |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-27 |
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