| DOI | Resolve DOI: https://doi.org/10.1049/el.2012.0109 |
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| Author | Search for: Gupta, J. A.1; Search for: Bezinger, A.1; Search for: Barrios, P. J.1; Search for: Lapointe, J.1; Search for: Poitras, D.1; Search for: Waldron, P.1 |
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| Affiliation | - National Research Council of Canada. Information and Communication Technologies
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| Format | Text, Article |
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| Abstract | A lateral etched-grating process was used to produce singlemode distributed feedback laser diodes at 3.23 μm. The devices are based on InGaAsSb/AlInGaAsSb type-I quantum well active regions grown on GaSb substrates by molecular beam epitaxy. The lasers were used in high-resolution spectroscopy of methane gas near the v3, R7 vibrational absorption transitions. |
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| Publication date | 2012-03-29 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21268058 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | aab00c4f-9896-44f3-bfd2-1ef8ef432c0b |
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| Record created | 2013-04-05 |
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| Record modified | 2020-04-21 |
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