| Download | - View author's version: Temperature dependence of ultrasharp luminescence lines in AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots (PDF, 439 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1139/p96-862 |
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| Author | Search for: Raymond, S.1; Search for: Fafard, S.1; Search for: Charbonneau, Sylvain1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Seventh Canadian Semiconductor Technology Conference, August 14-18, 1995, Ottawa, Ontario, Canada |
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| Abstract | CDATA[Ensembles of~600 AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots (QDs) are investigated using photoluminescence (PL) and time-resolved PL in the visible. At very low excitation intensities, the PL spectrum shows multiple ultranarrow luminescence lines (FWHM ~200 μeV), which are attributed to the ground-state transition of a few dots (4 or less). The temperature and intensity evolution of these sharp lines is then monitored. The temperature-dependent measurements show that the line width and lifetime of the narrow lines remain constant up to the onset of thermionic, emission. Intensity-dependent measurements show that for high excitation density the collective background, emitted by the ensemble of QDs, is enhanced relative to the amplitude of individual ultranarrow lines. |
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| Publication date | 1996 |
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| Publisher | National Research Council of Canada. Research Press |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12327889 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b07c61f7-f84d-44f4-9732-6edf051ed296 |
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| Record created | 2009-09-10 |
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| Record modified | 2022-11-17 |
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