| Download | - View accepted manuscript: Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide (PDF, 899 KiB)
|
|---|
| DOI | Resolve DOI: https://doi.org/10.1364/OL.37.000365 |
|---|
| Author | Search for: Velasco, Aitor, V.; Search for: Calvo, Maria L.; Search for: Cheben, Pavel1ORCID identifier: https://orcid.org/0000-0003-4232-9130; Search for: Ortega-Monux, Alejandro; Search for: Schmid, Jens H.1; Search for: Ramos, Carlos Alonso; Search for: Fernandez, Inigo Molina; Search for: Lapointe, Jean1; Search for: Vachon, Martin1; Search for: Janz, Siegfried1; Search for: Xu, Dan-Xia1 |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Abstract | The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 m. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is 0.7 dB and the 3 dB bandwidth is 26 nm. |
|---|
| Publication date | 2012-01-20 |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NPARC number | 19577564 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | b30baa11-b395-4bb4-8143-a1957698e924 |
|---|
| Record created | 2012-02-29 |
|---|
| Record modified | 2020-04-21 |
|---|
