| DOI | Resolve DOI: https://doi.org/10.1109/CORNEL.1995.482426 |
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| Author | Search for: McKinnon, W. R.1; Search for: McAlister, S. P.1; Search for: Abid, Z.1; Search for: Guzzo, E. E.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY , USA, August 7-9, 1995 |
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| Subject | CC-DHBTs; composite collectors; current blocking; double heterostructure bipolar transistors; drift-diffusion simulation; electron accumulation; gallium arsenide; heterojunction bipolar transistors; III-V semiconductors; indium compounds; InP-InGaAs-InP; one-flux analysis; semiconductor device models; spacer layer |
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| Abstract | We use the flux method of McKelvey, Longini, and Brody [Physical Review 123, 51 (1961)] to analyze current blocking in double heterostructure bipolar transistors (DHBTs) with composite collectors (CC). We include the effects of electron accumulation in the spacer layer in the collector, and show that this accumulation has severe effects at higher currents, imposing an intrinsic limit on the simplest CC design. We compare the results from the flux method with drift-diffusion simulations and measurements on InP/InGaAs/InP CC-DHBTs |
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| Publication date | 1995 |
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| In | |
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| Language | English |
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| NPARC number | 12333697 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b3dd5ea4-fddf-452a-ac3e-b935d3240bd4 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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