| DOI | Trouver le DOI : https://doi.org/10.1109/CORNEL.1995.482426 |
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| Auteur | Rechercher : McKinnon, W. R.1; Rechercher : McAlister, S. P.1; Rechercher : Abid, Z.1; Rechercher : Guzzo, E. E.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY , USA, August 7-9, 1995 |
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| Sujet | CC-DHBTs; composite collectors; current blocking; double heterostructure bipolar transistors; drift-diffusion simulation; electron accumulation; gallium arsenide; heterojunction bipolar transistors; III-V semiconductors; indium compounds; InP-InGaAs-InP; one-flux analysis; semiconductor device models; spacer layer |
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| Résumé | We use the flux method of McKelvey, Longini, and Brody [Physical Review 123, 51 (1961)] to analyze current blocking in double heterostructure bipolar transistors (DHBTs) with composite collectors (CC). We include the effects of electron accumulation in the spacer layer in the collector, and show that this accumulation has severe effects at higher currents, imposing an intrinsic limit on the simplest CC design. We compare the results from the flux method with drift-diffusion simulations and measurements on InP/InGaAs/InP CC-DHBTs |
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| Date de publication | 1995 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12333697 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | b3dd5ea4-fddf-452a-ac3e-b935d3240bd4 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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