| DOI | Resolve DOI: https://doi.org/10.1016/j.sse.2006.04.017 |
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| Author | Search for: McAlister, Sean1; Search for: Bardwell, Jennifer1; Search for: Haffouz, Soufien1; Search for: Tang, Haipeng1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 2005 International Semiconductor Device Research Symposium (ISDRS), 7-9 December 2005, Bethesda, MD, USA |
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| Subject | self-heating; GaN HFETs; device temperature |
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| Abstract | The self-heating has been measured and simulated for GaN field effect transistors. For a high frequency test device, which is really two devices in parallel, experiments are described where one side of the device has been heated and the other side used to monitor the self-heating and heat-flow from the side of the device where the self-heating is severe. |
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| Publication date | 2006-06-12 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12744634 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b6afab73-a317-415a-8120-039e77dd900e |
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| Record created | 2009-10-27 |
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| Record modified | 2020-04-22 |
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