DOI | Resolve DOI: https://doi.org/10.1080/01418639408240242 |
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Author | Search for: Chen, Wei; Search for: Maris, Humphrey; Search for: Wasilewski, Zbigniew R1; Search for: Tamura, Shin-Ichiro |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Abstract | We have used a novel method to measure the attenuation and velocity of 56 GHz longitudinal phonons in GaAs over the temperature range from 50 to 300 K. The sample was a molecular-beam-epitaxy-grown layer separated from the substrate by a GaAs/AlAs multilayer structure that acted as a resonant reflector for the phonons. We discuss the results in terms of theories of the phonon-phonon interaction. |
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Publication date | 1994-09 |
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In | |
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Language | English |
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NPARC number | 12337703 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | b8bcb830-47ec-470b-ac40-b219192db6e0 |
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Record created | 2009-09-10 |
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Record modified | 2020-04-27 |
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