| DOI | Resolve DOI: https://doi.org/10.1116/1.3590932 |
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| Author | Search for: Turski, H.; Search for: Siekacz, M.; Search for: Sawicka, M.; Search for: Cywinski, G.; Search for: Krysko, M.; Search for: Grzanka, S.; Search for: Smalc-Koziorowska, J.; Search for: Grzegory, I.; Search for: Porowski, S.; Search for: Wasilewski, Z.R.1; Search for: Skierbiszewski, C. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Gallium flux; Growth mechanisms; Miscut angle; Nitrogen fluxes; Phenomenological models; Plasma assisted molecular beam epitaxy; Epitaxial growth; Gallium; Gallium alloys; Gallium compounds; Indium; Molecular beam epitaxy; Molecular beams |
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| Abstract | In this article, the authors discuss the mechanism of InGaN growth by plasma assisted molecular beam epitaxy. They present the evidence of the influence of substrate miscut on indium incorporation for the growths with different gallium fluxes. They propose and discuss the phenomenological model which describes the incorporation of indium into InGaN layers grown under the indium-rich conditions that takes into account following parameters: gallium and nitrogen fluxes, miscut angle, and the growth temperature. © 2011 American Vacuum Society. |
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| Publication date | 2011 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21271124 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b8c2fa5f-3ac7-49c7-98f4-6685009f31a6 |
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| Record created | 2014-03-24 |
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| Record modified | 2020-04-21 |
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