| DOI | Resolve DOI: https://doi.org/10.1109/TNANO.2007.891818 |
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| Author | Search for: Lockwood, David1; Search for: Wu, X.1; Search for: Baribeau, J. -M.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Alloy; coherent growth; dots; Ge; islands; Raman spectroscopy; Si; strain; transmission electron microscopy; X-ray diffraction |
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| Abstract | Coherent Si1-x Gex island growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations in the range 0.37 <= x <=0.56. A combined transmission electron microscopy, X-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to minimize the strain energy, while maintaining epitaxial growth, and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher. |
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| Publication date | 2007 |
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| In | |
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| NPARC number | 12744869 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | bbeab85a-01c8-4fcc-a085-913cf7e83e6e |
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| Record created | 2009-10-27 |
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| Record modified | 2020-05-10 |
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