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High-Gain, Low Turn-on Voltage AlGaAs/GaAsNSb/GaAs HBTs Grown by Molecular Beam Epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/LED.2007.910000
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • IEEE Electron Device Letters 28, no. 12 (2007): 1083–.
NPARC number12744623
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Record identifierbd02af3c-a4dd-41a4-aa5d-98311fe29ff7
Record created2009-10-27
Record modified2020-05-10
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