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Characteristics of reactive magnetron sputtered ZnO films

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/ULTSYM.1989.67012
AuthorSearch for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada
FormatText, Article
ConferenceProceedings of the IEEE Ultrasonics Symposium, 3-6 Oct. 1989, Montreal, Quebec, Canada
SubjectZinc oxide; Substrates; Piezoelectric films; Plasma measurements; Sputtering; Plasma temperature; Semiconductor films; Scanning electron microscopy; Crystallization; Cathodes
Abstract
Highly oriented, dense, and fine-grain polycrystalline ZnO films with an excellent surface flatness have been produced. The thin films were deposited by DC conical reactive magnetron sputtering. X-ray scanning and scanning electron microscopy were used to evaluate film crystalline structure, and electromechanical measurements were used to measure piezoelectric properties. The relative importance of experimental parameters influencing the film formation and quality is as follows: substrate distance and location with respect to the cathode, quality of substrate surface, oxygen flow and pressure, plasma-discharge power, and substrate temperature. Excellent films have been produced on glass, on thermally oxidized Si substrates, and on clean metallic thin films. Films having c-axis orientation of up to 17 degrees to the substrate normal have been successfully deposited on Al thin layers on Si-SiO/sub 2/ substrates by varying the substrate position with respect to the plasma. The best films produced on (lll) Si had X-ray rocking curve half-widths of 0.9 degrees; to the best of our knowledge this is the smallest value ever reported in the literature
Publication date
PublisherIEEE
In
  • Proceedings of the IEEE Ultrasonics Symposium: 373–376.
LanguageEnglish
Peer reviewedYes
NRC numberCNRC 30340
NRC-IGM89AP-401-892-G
NPARC number23004235
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Record created2018-10-12
Record modified2020-03-17
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