| DOI | Resolve DOI: https://doi.org/10.1016/0039-6028(96)00569-9 |
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| Author | Search for: D'Iorio, M.1; Search for: Stewart, D.1; Search for: Deblois, S.1; Search for: Brown, D.1; Search for: NoëL, J.-P.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Electrical transport; Electrical transport measurements; Magnetic phenomena; Quantum effects; Quantum wells; Semiconductor-semiconductor heterostructures; Silicon-germanium |
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| Abstract | We have studied the low-temperature transport properties of p-type Si/Si0.87Ge0.13/Si modulation doped heterostructures as a fimction of SiGe well width. We have observed re-entrant metal-insulator transitions in the quantum Hall effect regime at half-filled Landau levels. We report on the non-linear current-voltage characteristics and the thermal activation of the diagonal resistivity associated with these transitions. We have also studied the temperature dependence of the resistivity at zero magnetic field as a function of well width and present evidence for a metal-insulator transition. |
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| Publication date | 1996-07-20 |
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| In | |
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| Language | English |
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| NPARC number | 12328219 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | be525812-472d-4350-b273-e868ad09f39c |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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