| DOI | Trouver le DOI : https://doi.org/10.1016/0039-6028(96)00569-9 |
|---|
| Auteur | Rechercher : D'Iorio, M.1; Rechercher : Stewart, D.1; Rechercher : Deblois, S.1; Rechercher : Brown, D.1; Rechercher : NoëL, J.-P.1 |
|---|
| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
|
|---|
| Format | Texte, Article |
|---|
| Sujet | Electrical transport; Electrical transport measurements; Magnetic phenomena; Quantum effects; Quantum wells; Semiconductor-semiconductor heterostructures; Silicon-germanium |
|---|
| Résumé | We have studied the low-temperature transport properties of p-type Si/Si0.87Ge0.13/Si modulation doped heterostructures as a fimction of SiGe well width. We have observed re-entrant metal-insulator transitions in the quantum Hall effect regime at half-filled Landau levels. We report on the non-linear current-voltage characteristics and the thermal activation of the diagonal resistivity associated with these transitions. We have also studied the temperature dependence of the resistivity at zero magnetic field as a function of well width and present evidence for a metal-insulator transition. |
|---|
| Date de publication | 1996-07-20 |
|---|
| Dans | |
|---|
| Langue | anglais |
|---|
| Numéro NPARC | 12328219 |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | be525812-472d-4350-b273-e868ad09f39c |
|---|
| Enregistrement créé | 2009-09-10 |
|---|
| Enregistrement modifié | 2020-03-20 |
|---|
