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Plasma-assisted MBE growth of GaN on GaN/sahire templates grown in situ by ammonia- MBE

From National Research Council Canada

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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Conference206th Meeting of the Electrochemical Society, 3-8 October 2004, Honolulu, Hawaii, USA
Publication date
In
  • State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V 2004, no. 6 (2004): 215–226.
NoteFifth Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics and 41st State-of-the-Art Program on Compound Semiconductors Symposia
LanguageEnglish
Peer reviewedYes
NPARC number12346299
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Record identifierbff2ccf7-7e9d-4168-be30-502c8a8f8e47
Record created2009-09-17
Record modified2020-04-17
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