Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [C2H52N]4Hf with NO and O2

Author	Search for: Lee, M.; Search for: Landheer, Dolf¹; Search for: Wu, X.; Search for: Couillard, M.; Search for: Lu, Z-H; Search for: Ng, W-T; Search for: Chen, J.; Search for: Chao, T.; Search for: Lei, T.
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Conference	Mat Res Soc Sym, Spring MRS Meeting, April 2004, San Francisco
NPARC number	12346479
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Record identifier	c11b9dcd-64d1-4c42-b2fe-a8673f1a52d8
Record created	2009-09-17
Record modified	2020-04-16