| Download | - View accepted manuscript: Non-contact characterization of carrier mobility in long-wave infrared HgCdTe films with terahertz time-domain spectroscopy (PDF, 1.4 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1109/TTHZ.2024.3393627 |
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| Author | Search for: Refvik, Nils B.; Search for: Jensen, Charles E.; Search for: Purschke, David N.1; Search for: Pan, Wenwu; Search for: Simpson, Howe R. J.; Search for: Lei, Wen; Search for: Gu, Renjie; Search for: Antoszewski, Jarek; Search for: Umana-Membreno, Gilberto A.; Search for: Faraone, Lorenzo; Search for: Hegmann, Frank A. |
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| Affiliation | - National Research Council of Canada. Quantum and Nanotechnologies
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| Funder | Search for: Natural Sciences and Engineering Research Council of Canada; Search for: Canada Foundation for Innovation (CFI), the Alberta/Technical University of Munich International Graduate School for Hybrid Functional Materials (ATUMS), Alberta Innovates; Search for: Alberta Innovates Technology Futures (AITF) Strategic Chairs Program, the Australian Research Council; Search for: WA Node of the Australian National Fabrication Facility |
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| Format | Text, Article |
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| Subject | charge carrier processes; conductivity measurement; tetrahertz time-domain spectroscopy (THz-TDs); II-VI semiconductor materials |
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| Abstract | We use terahertz time-domain spectroscopy to measure the complex dielectric function of long-wave infrared Hg₁₋ₓCdₓTe films (x = 0.18, 0.20, 0.22) as a function of temperature in a non-contact manner. Using a Drude-Lorentz model fit to the measured complex transmission function combined with a Kane model description of the band structure, we obtain the temperature-dependent conduction band carrier density, effective mass, scattering time and carrier mobility for all three Hg₁₋ₓCdₓTe films. The optical properties of a bare substrate of Cd₀.₉₆Zn₀.₀₄Te were also measured in the terahertz region. The high quality of the Hg₁₋ₓCdₓTe films is demonstrated by ultrahigh mobilities exceeding 10⁵ cm²V⁻¹s⁻¹ and ionized donor densities less than 3 × 10¹⁵ cm⁻³ at temperatures below 100 K. |
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| Publication date | 2024-04-25 |
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| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
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| In | |
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| Language | English |
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| In press | Yes |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c1745344-739d-44c5-9ee0-6f0019d9463f |
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| Record created | 2024-05-15 |
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| Record modified | 2024-05-16 |
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