| Téléchargement | - Voir le manuscrit accepté : Non-contact characterization of carrier mobility in long-wave infrared HgCdTe films with terahertz time-domain spectroscopy (PDF, 1.4 Mio)
|
|---|
| DOI | Trouver le DOI : https://doi.org/10.1109/TTHZ.2024.3393627 |
|---|
| Auteur | Rechercher : Refvik, Nils B.; Rechercher : Jensen, Charles E.; Rechercher : Purschke, David N.1; Rechercher : Pan, Wenwu; Rechercher : Simpson, Howe R. J.; Rechercher : Lei, Wen; Rechercher : Gu, Renjie; Rechercher : Antoszewski, Jarek; Rechercher : Umana-Membreno, Gilberto A.; Rechercher : Faraone, Lorenzo; Rechercher : Hegmann, Frank A. |
|---|
| Affiliation | - Conseil national de recherches du Canada. Quantique et nanotechnologies
|
|---|
| Bailleur de fonds | Rechercher : Natural Sciences and Engineering Research Council of Canada; Rechercher : Canada Foundation for Innovation (CFI), the Alberta/Technical University of Munich International Graduate School for Hybrid Functional Materials (ATUMS), Alberta Innovates; Rechercher : Alberta Innovates Technology Futures (AITF) Strategic Chairs Program, the Australian Research Council; Rechercher : WA Node of the Australian National Fabrication Facility |
|---|
| Format | Texte, Article |
|---|
| Sujet | charge carrier processes; conductivity measurement; tetrahertz time-domain spectroscopy (THz-TDs); II-VI semiconductor materials |
|---|
| Résumé | We use terahertz time-domain spectroscopy to measure the complex dielectric function of long-wave infrared Hg₁₋ₓCdₓTe films (x = 0.18, 0.20, 0.22) as a function of temperature in a non-contact manner. Using a Drude-Lorentz model fit to the measured complex transmission function combined with a Kane model description of the band structure, we obtain the temperature-dependent conduction band carrier density, effective mass, scattering time and carrier mobility for all three Hg₁₋ₓCdₓTe films. The optical properties of a bare substrate of Cd₀.₉₆Zn₀.₀₄Te were also measured in the terahertz region. The high quality of the Hg₁₋ₓCdₓTe films is demonstrated by ultrahigh mobilities exceeding 10⁵ cm²V⁻¹s⁻¹ and ionized donor densities less than 3 × 10¹⁵ cm⁻³ at temperatures below 100 K. |
|---|
| Date de publication | 2024-04-25 |
|---|
| Maison d’édition | Institute of Electrical and Electronics Engineers (IEEE) |
|---|
| Dans | |
|---|
| Langue | anglais |
|---|
| Sous presse | Oui |
|---|
| Publications évaluées par des pairs | Oui |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | c1745344-739d-44c5-9ee0-6f0019d9463f |
|---|
| Enregistrement créé | 2024-05-15 |
|---|
| Enregistrement modifié | 2024-05-16 |
|---|
