Planar and maskless selective growth of AlGaN/GaN HEMT structures on Si111 substrates by ammonia molecular beam epitaxy

From National Research Council Canada

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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
ConferenceThe 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, 2007
NPARC number12346546
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Record identifierc6e388d7-fd9c-4f5a-a1ad-330fa72520f5
Record created2009-09-17
Record modified2020-04-16
Date modified: