| DOI | Resolve DOI: https://doi.org/10.1016/S0254-0584(03)00228-1 |
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| Author | Search for: Ko, Chun-Te1; Search for: Su, Y.; Search for: Chang, Shoude2; Search for: Tsai, T.; Search for: Kuan, T.; Search for: Lan, W.; Search for: Lin, J.; Search for: Lin, W.; Search for: Cherng, Y.; Search for: Webb, James3 |
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| Affiliation | - National Research Council of Canada. NRC Genomics and Health Initiative
- National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
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| Format | Text, Article |
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| Subject | Epitaxial lateral overgrowth (ELO); Etch pits density (EPD); GaN; Metalorganic vapor phase epitaxy (MOVPE) |
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| Abstract | A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520??C for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO2 stripes along direction, it was found that an 8?min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480?nm and an etch pits density (EPD) of 1.6?107?cm-2 in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample. |
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| Publication date | 2003-09-28 |
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| In | |
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| NPARC number | 12338178 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c722dcce-ca11-44d9-87da-119c1c0a6e07 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-02 |
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